Field-free full switching of chiral antiferromagnetic order

Nature

by Zhiyuan Zhou

February 26, 2026

AI-Generated Deep Dive Summary

Scientists have achieved a groundbreaking advancement in magnetic memory technology by realizing field-free full switching of chiral antiferromagnetic order. This development leverages the unique properties of Mn3Sn homo-junctions, combining both symmetric and asymmetric driving forces to enable efficient and low-power switching. The study demonstrates that this unconventional approach surpasses traditional methods requiring perpendicular uniaxial anisotropy, offering a more energy-efficient solution for future memory devices. The research highlights the importance of chiral antiferromagnets, which combine advantages of both ferromagnets and antiferromagnets. By utilizing the tilted Kagomé geometry in polycrystalline Mn3Sn, the study achieves the division of spin polarization into components that drive octupole rotation and determine switching chirality. This innovation overcomes previous limitations, significantly reducing power consumption while maintaining robustness against external magnetic fields. The breakthrough is particularly significant for applications requiring ultradense integration and ultrafast operations, such as next-generation memory technologies. By eliminating the need for high current densities and lowering energy barriers through efficient spin-torque characteristics, this method represents a major step forward in achieving practical, energy-efficient magnetic devices. This discovery not only advances our understanding of chiral antiferromagnets but also opens new possibilities for designing memory systems with unprecedented performance. The ability to program chirality and achieve zero-field switching further underscores the potential of this approach in overcoming existing challenges in spintronics and magnetic storage.

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Originally published on Nature on 2/26/2026